Specifications table for model FC5516010R
ItemPerformance characteristics
Document PartsFC5516010R
SeriesComposite MOSFET
VDS (V)60
VGS (V)12
ID [Max] (A)0.1
IDp (A)0.2
PD (W)0.15
Tch (°C)150
Tstg (°C)-55 to +150
VDSS [Min] (V)60
IDSS [Max] (µA)1
IGSS@VGS=10V [Max] (µA)10
Vth [Min] (V)0.9
Vth [Typ] (V)1.2
Vth [Max] (V)1.5
RDS(on)@VGS=4.0V [Typ] (mΩ)6000
RDS(on)@VGS=4.0V [Max] (mΩ)12000
RDS(on)@VGS=2.5V [Typ] (mΩ)8000
RDS(on)@VGS=2.5V [Max] (mΩ)15000
Ciss [Typ] (pF)12
Coss [Typ] (pF)7
Crss [Typ] (pF)3
Ton [Typ] (Ns)100
Toff [Typ] (Ns) 100
RoHS (Compliance Certificate)Please refer to the related information
Reach (Report of Confirmation) Please refer to the related information
Halogen FreeYes
IDSS [Max] (μA)1
IGSS@VGS=10V [Max] (μA)10
ton [Typ] (ns)100
toff [Typ] (ns)100

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