Micro Photoelectric Sensors: Amplifier Built-in / U-shaped Micro Photoelectric Sensor [Compact / Connector built-in type] PM-65

Model List

Found 18 matches. Display 1 - 15 matches.
Part No.sort ascendingData SheetCE marking directivesSensing rangeMinimum sensing objectHysteresisRepeatabilitySupply voltageCurrent consumptionOutputOutput:Output operationOutput:Short-circuit protectionParts Inventory
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design engineersPanasonicPM-Y65-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-Y65
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-T65W-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-T65W
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-T65-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-T65
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-R65W-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-R65W
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-R65-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-R65
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-L65-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-L65
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-K65-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-K65
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessNPN open-collector transistor
・Maximum sink current: 50 mA
・Applied voltage: 30 V DC or less (between output and 0 V)
・Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated
design engineersPanasonicPM-F65W-P
EMC Directive, RoHS Directive6 mm 0.236 in (fixed)0.8 × 1.2 mm 0.031 × 0.047 in opaque object0.05 mm 0.002 in or less0.01 mm 0.0004 in or less5 to 24 V DC ±10 % Ripple P-P 10 % or less15 mA or lessPNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Incorporated with 2 outputs: Light-ON / Dark-ONIncorporated

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