Photoelectric Sensors / Laser Sensors: Compact Photoelectric Sensor CX-400 Ver.2

Model List

Found 168 matches. Display 121 - 135 matches.
Part No.sort ascendingData SheetCE marking directive complianceSensing rangeSensing objectHysteresisRepeatability(perpendicular to sensing axis)Supply voltageCurrent consumptionOutputOutput:Output operationOutput:Short-circuit protectionParts Inventory
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design engineersPanasonicCX-421-Z
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessNPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-P-Z
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessPNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-P-J
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessPNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-P-C5
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessPNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-P-C05
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessPNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-P
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessPNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-J
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessNPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-C5
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessNPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421-C05
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessNPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-421
EMC Directive, RoHS Directive300 mm 11.811 in
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
Opaque, translucent or transparent object
(Note) Make sure to confirm detection with an actual sensor before use.
15 % or less of operation distance
(Note) The sensing range and hysteresis of the diffuse reflective type sensor are specified for white non-glossy paper (200 × 200 mm 7.874 × 7.874 in) as the object.
1 mm 0.039 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less13 mA or lessNPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-413-Z
EMC Directive, RoHS Directive30 m 98.425 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
n/a0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 25 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-413-P-Z
EMC Directive, RoHS Directive30 m 98.425 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
n/a0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 25 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-413-P-J
EMC Directive, RoHS Directive30 m 98.425 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
n/a0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 25 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-413-P-C5
EMC Directive, RoHS Directive30 m 98.425 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
n/a0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 25 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-413-P-C05
EMC Directive, RoHS Directive30 m 98.425 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
n/a0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 25 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated

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