Photoelectric Sensors / Laser Sensors: Ultra-minute Photoelectric Sensor EX-Z

Model List

Found 48 matches. Display 1 - 15 matches.
Part No.sort descendingData SheetCE marking directive complianceOutput operationSensing rangeMin. sensing objectRepeatability(perpendicular to sensing axis)Supply voltageCurrent consumptionOutputOutput:Short-circuit protectionParts Inventory
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design engineersPanasonicEX-Z11FA-P-R
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11FB-P-R
EMC Directive, RoHS DirectiveDark-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11A-P
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11A-P-R
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11A-R
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z11B-P
EMC Directive, RoHS DirectiveDark-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11B-R
EMC Directive, RoHS DirectiveDark-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z11FA-P
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z11FA-R
EMC Directive, RoHS DirectiveLight-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z11FB-R
EMC Directive, RoHS DirectiveDark-ON50 mm 1.969 inø0.3 mm ø0.012 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 50 mm 1.969 in)0.02 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z12A
EMC Directive, RoHS DirectiveLight-ON200 mm 7.874 inø0.5 mm ø0.02 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 200 mm 7.874 in)0.03 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z12A-P
EMC Directive, RoHS DirectiveLight-ON200 mm 7.874 inø0.5 mm ø0.02 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 200 mm 7.874 in)0.03 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z12A-P-R
EMC Directive, RoHS DirectiveLight-ON200 mm 7.874 inø0.5 mm ø0.02 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 200 mm 7.874 in)0.03 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated
design engineersPanasonicEX-Z12B
EMC Directive, RoHS DirectiveDark-ON200 mm 7.874 inø0.5 mm ø0.02 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 200 mm 7.874 in)0.03 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 20 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1.5 V or less (at 20 mA sink current)
Incorporated
design engineersPanasonicEX-Z12B-P
EMC Directive, RoHS DirectiveDark-ON200 mm 7.874 inø0.5 mm ø0.02 in opaque object (Completely beam interrupted object)(Setting distance between emitter and receiver: 200 mm 7.874 in)0.03 mm 0.001 in or less12 to 24 V DC ±10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 20 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1.5 V or less (at 20 mA source current)
Incorporated

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