Photoelectric Sensors / Laser Sensors: Wafer Mapping Sensor M-DW1

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Part No.sort descendingData SheetCE marking directive complianceCenter sensing distanceSensing objectDetectable surfaceSensing angleWafer pitchSuitable cassetteSupply voltageCurrent consumptionOutputParts Inventory
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design engineersPanasonicM-DW1
EMC Directive, RoHS Directive45 mm 1.772 in3 inch or larger semiconductor wafer
(Note:In case of 8 inch or less wafers, the wafer pitch, the orientation flat or surface condition may affect the sensing.)
Surface having a side edge which reflects light in the light receiving direction
(Note:Polished wafers, etc., which have a sharp edge cannot be detected since they do not reflect the light in the light receiving direction.)
12.5 ± 5°
(Note:Since the position of the orientation flat may vary by ±20° due to its rotation.)
Separate sensing is possible at normal sensitivity for 3 mm 0.118 in pitch or more
(Note:This is the pitch of an 8 inch wafer near its center region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal.)
SEMI standard FOUP cassette / open cassette12 to 24 V DC ± 10 % Ripple P-P 10 % or less65 mA or lessNPN output / PNP output, selectable with output selection switch

NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1 V or less (at 100 mA sink current)
0.4 V or less (at 16 mA sink current)

PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1 V or less (at 100 mA source current)
0.4 V or less (at 16 mA source current)