Semiconductors: GaN Power

GaN Power design engineers Panasonic
GaN power

In a world conscious of the cost of wasting energy, yet relying on myriads of electrically powered devices, Gallium Nitride - a compound of Gallium and Nitrogen - is emerging as a material of choice to implement the next generation of power transistors. Thanks to their extremely fast switching and high conduction capabilities, GaN transistors push out the boundaries of power converter design in terms of achievable energy efficiency and power density.


  • X-GaN Power Transistors“GaN (gallium nitride)” is a compound of Gallium (Ga) and Nitrogen (N), that possesses high breakdown voltage & low conduction resistance characteristics that enable miniaturization & high-speed switching.