X-GaN™ Power

COMPLETE PRODUCT SPECIFICATION DETAILS

In a world conscious of the cost of wasting energy, yet relying on myriads of electrically powered devices, Gallium Nitride - a compound of Gallium and Nitrogen - is emerging as a material of choice to implement the next generation of Power Transistors.

Thanks to their extremely fast switching and high conduction capabilities, X-GaN Transistors push out the boundaries of Power Converter design in terms of achievable energy efficiency and power density.