Semiconductors: X-GaN™ Power

X-GaN™ Power design engineers Panasonic
X-GaN™ Power

In a world conscious of the cost of wasting energy, yet relying on myriads of electrically powered devices, Gallium Nitride - a compound of Gallium and Nitrogen - is emerging as a material of choice to implement the next generation of power transistors. Thanks to their extremely fast switching and high conduction capabilities, X-GaN transistors push out the boundaries of power converter design in terms of achievable energy efficiency and power density.


  • X-GaN™ Power Devices“X- GaN (gallium nitride)” is a compound of Gallium (Ga) and Nitrogen (N), that possesses high breakdown voltage & low conduction resistance characteristics that enable miniaturization & high-speed switching.