Laser Measurement Sensors: Compact Laser Displacement Sensor HL-G1

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Found 16 matches. Display 1 - 15 matches.
Part No.sort ascendingData SheetCE marking directive complianceTypeMeasurement center distanceMeasuring rangeResolutionLinearityTemprerature characteristicsLight sourceBeam diameterReceiving elementParts Inventory
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design engineersPanasonicHL-G125-S-J
EMC Directive, RoHS DirectiveHigh functionality type250 mm 9.843 in±150 mm ±5.906 in20 μm 0.787 mil±0.3% F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
1.75 × 3.5 mm 0.069 × 0.138 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G125-A-C5
EMC Directive, RoHS DirectiveStandard type250 mm 9.843 in±150 mm ±5.906 in20 μm 0.787 mil±0.3% F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
1.75 × 3.5 mm 0.069 × 0.138 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G112-S-J
EMC Directive, RoHS DirectiveHigh functionality type120 mm 4.724 in± 60 mm ± 2.362 in8 μm 0.315 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
1.0 × 1.5 mm 0.039 x 0.059 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G112-A-C5
EMC Directive, RoHS DirectiveStandard type120 mm 4.724 in± 60 mm ± 2.362 in8 μm 0.315 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
1.0 × 1.5 mm 0.039 x 0.059 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G108A-RS-J
EMC Directive, RoHS DirectiveHigh functionality type82.9 mm 3.264 in±10 mm ±0.394 in2.5 μm 0.098 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.2 × 0.2 mm 0.008 × 0.008 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G108A-RA-C5
EMC Directive, RoHS DirectiveStandard type82.9 mm 3.264 in±10 mm ±0.394 in2.5 μm 0.098 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.2 × 0.2 mm 0.008 × 0.008 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G108-S-J
EMC Directive, RoHS DirectiveHigh functionality type85 mm 3.346 in± 20 mm ± 0.787 in2.5 μm 0.098 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.75 × 1.25 mm 0.030 x 0.049 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G108-A-C5
EMC Directive, RoHS DirectiveStandard type85 mm 3.346 in± 20 mm ± 0.787 in2.5 μm 0.098 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.75 × 1.25 mm 0.030 x 0.049 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G105A-RS-J
EMC Directive, RoHS DirectiveHigh functionality type47.3 mm 1.862 in±5 mm ±0.197 in1.5 μm 0.059 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.1 × 0.1 mm 0.004 × 0.004 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G105A-RA-C5
EMC Directive, RoHS DirectiveStandard type47.3 mm 1.862 in±5 mm ±0.197 in1.5 μm 0.059 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.1 × 0.1 mm 0.004 × 0.004 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G105-S-J
EMC Directive, RoHS DirectiveHigh functionality type50 mm 1.969 in± 10 mm ± 0.394 in1.5 μm 0.059 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.5 × 0.1 mm 0.020 x 0.039 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G105-A-C5
EMC Directive, RoHS DirectiveStandard type50 mm 1.969 in± 10 mm ± 0.394 in1.5 μm 0.059 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.5 × 0.1 mm 0.020 x 0.039 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G103A-RS-J
EMC Directive, RoHS DirectiveHigh functionality type26.3mm 1.035 in±2 mm ±0.079 in0.5 μm 0.020 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.1 × 0.1 mm 0.004 × 0.004 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G103A-RA-C5
EMC Directive, RoHS DirectiveStandard type26.3mm 1.035 in±2 mm ±0.079 in0.5 μm 0.020 mil±0.2 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 1 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 0.39 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.1 × 0.1 mm 0.004 × 0.004 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor
design engineersPanasonicHL-G103-S-J
EMC Directive, RoHS DirectiveHigh functionality type30 mm 1.181 in± 4 mm ± 0.157 in0.5 μm 0.020 mil± 0.1 % F.S.± 0.08 % F.S. / ℃Red semiconductor laser, Class 2 (IEC / JIS / FDA (Note:This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration).) , Laser Notice No. 50)
Max. output: 1 mW (Peak emission wavelength: 655 nm 0.026 mil)
0.1 × 0.1 mm 0.004 × 0.004 in
(Note) This beam diameter is the size at the measurement center distance. These values were defined by using 1/e2 (13.5 %) of the center light intensity. If
there is a slight leakage of light outside the normal spot diameter and if the periphery surrounding the sensing point has a higher reflectivity than the
sensing point itself, then the results may be affected.
CMOS image sensor

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