Photoelectric Sensors / Laser Sensors: CMOS type Micro Laser Distance Sensor HG-C1000L

Model List

Found 10 matches. Display 1 - 10 matches.
Part No.sort ascendingData SheetRegulatory compliance and certificationMeasurement center distanceMeasuring rangeRepeatabilityLinearityTemprerature characteristicsLight sourceBeam diameterSupply voltageCurrent consumptionParts Inventory
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design engineersPanasonicHG-C1400L3-P-J
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification400 mm 15.748 in±200 mm 7.874 in300 μm 11.811 mil
(Measuring distance 200 to 400 mm 7.874 to 15.748 in)
800 μm 31.496 mil
(Measuring distance 400 to 600 mm 15.748 to 23.622 in)
±0.2 % F.S.
(Measuring distance 200 to 400 mm 7.874 to 15.748 in)
±0.3 % F.S.
(Measuring distance 400 to 600 mm 15.748 to 23.622 in)
0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø500 μm 19.685 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1400L3-P
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification400 mm 15.748 in±200 mm 7.874 in300 μm 11.811 mil
(Measuring distance 200 to 400 mm 7.874 to 15.748 in)
800 μm 31.496 mil
(Measuring distance 400 to 600 mm 15.748 to 23.622 in)
±0.2 % F.S.
(Measuring distance 200 to 400 mm 7.874 to 15.748 in)
±0.3 % F.S.
(Measuring distance 400 to 600 mm 15.748 to 23.622 in)
0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø500 μm 19.685 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1200L3-P-J
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification200 mm 7.874 in±80 mm 3.150 in200 μm 7.874 mil±0.2 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø300 μm 11.811 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1200L3-P
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification200 mm 7.874 in±80 mm 3.150 in200 μm 7.874 mil±0.2 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø300 μm 11.811 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1100L3-P-J
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification100 mm 3.937 in±35 mm 1.328 in70 μm 2.756 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø120 μm 4.724 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1100L3-P
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification100 mm 3.937 in±35 mm 1.328 in70 μm 2.756 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø120 μm 4.724 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1050L3-P-J
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification50 mm 1.969 in±15 mm 0.591 in30 μm 1.181 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø70 μm 2.756 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1050L3-P
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification50 mm 1.969 in±15 mm 0.591 in30 μm 1.181 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø70 μm 2.756 mil approx.24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1030L3-P-J
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification30 mm 1.181 in±5 mm 0.197 in10 μm 0.394 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø50 μm 1.969 mil approx24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)
design engineersPanasonicHG-C1030L3-P
EMC Directive, RoHS Directive, FDA Regulations, UL/c-UL Certification30 mm 1.181 in±5 mm 0.197 in10 μm 0.394 mil±0.1 % F.S.0.03%F.S./℃Red semiconductor laser Class 2 [IEC / JIS / GB / FDA (Note)] Max. output: 1 mW, emission peak wavelength: 655 nm 0.026 mil
(Note:)This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 50, dated June 24, 2007, issued by the FDA (Food and Drug Administration).
ø50 μm 1.969 mil approx24 V DC ±10 % Ripple P-P 10 %40 mA or less (at 24 V DC supply voltage)