Photoelectric Sensors / Laser Sensors: Compact Photoelectric Sensor CX-400 Ver.2

Model List

Found 168 matches. Display 1 - 15 matches.
Part No.sort descendingData SheetCE marking directive complianceSensing rangeSensing objectRepeatability(perpendicular to sensing axis)Supply voltageCurrent consumptionOutputOutput:Output operationOutput:Short-circuit protectionParts Inventory
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design engineersPanasonicCX-411
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-C5
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-J
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-P
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-P-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-P-C5
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-P-J
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-P-Z
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411-Z
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated
design engineersPanasonicCX-411A-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
n/aIncorporated
design engineersPanasonicCX-411A-P-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
n/aIncorporated
design engineersPanasonicCX-411B-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
n/aIncorporated
design engineersPanasonicCX-411B-P-C05
EMC Directive, RoHS Directive10 m 32.808 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 15 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 100 mA source current), 1 V or less (at 16 mA source current)
n/aIncorporated
design engineersPanasonicCX-412
EMC Directive, RoHS Directive15 m 49.213 ftØ12 mm Ø0.472 in or more opaque object
(Note) If slit masks (optional) are fitted, an object of Ø0.5 mm Ø0.020 in (using round slit mask) can be detected.
0.5 mm 0.020 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 20 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 100 mA sink current), 1 V or less (at 16 mA sink current)
Switchable either Light-ON or Dark-ONIncorporated

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