Adjustable Range Reflective Photoelectric Sensor RX-LS200
Panasonic's Die-cast Adjustable Range Reflective Photoelectric Sensor. The Sensor does not detect the background beyond the set point and the color or size of the object does not affect its sensing performance.
Adjustable Range Reflective Photoelectric Sensor RX-LS200
Part number list
Results 3
Models table for series Adjustable Range Reflective Photoelectric Sensor RX-LS200
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
PNP open-collector transistor - Maximum source current: 100 mA - Applied voltage: 30 V DC or less (between output and +V) - Residual voltage: 1 V or less (at 100 mA source current), 0.4 V or less (at 16 mA source current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
-
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
NPN open-collector transistor - Maximum sink current: 100 mA - Applied voltage: 30 V DC or less (between output and 0 V) - Residual voltage: 1.5 V or less (at 100 mA sink current), 0.4 V or less (at 16 mA sink current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
Incorporated
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
NPN open-collector transistor - Maximum sink current: 100 mA - Applied voltage: 30 V DC or less (between output and 0 V) - Residual voltage: 1.5 V or less (at 100 mA sink current), 0.4 V or less (at 16 mA sink current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
Incorporated
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
PNP open-collector transistor - Maximum source current: 100 mA - Applied voltage: 30 V DC or less (between output and +V) - Residual voltage: 1 V or less (at 100 mA source current), 0.4 V or less (at 16 mA source current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
-
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
NPN open-collector transistor - Maximum sink current: 100 mA - Applied voltage: 30 V DC or less (between output and 0 V) - Residual voltage: 1.5 V or less (at 100 mA sink current), 0.4 V or less (at 16 mA sink current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
Incorporated
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)
50 to 200 mm 1.969 to 7.874 in with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
10 % or less of operation distance with white non-glossy paper (50 x 50 mm 1.969 x 1.969 in)
Along sensing axis: 1 mm 0.039 in or less Perpendicular to sensing axis: 0.5 mm 0.020 in or less
12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less
40 mA or less
NPN open-collector transistor - Maximum sink current: 100 mA - Applied voltage: 30 V DC or less (between output and 0 V) - Residual voltage: 1.5 V or less (at 100 mA sink current), 0.4 V or less (at 16 mA sink current)
DC-12 or DC-13
Switchable either Light-ON or Dark-ON
Incorporated
1 ms or less
Red LED (lights up when the output is ON)
Green LED (lights up under stable light received condition or stable dark condition)
2-turn mechanical adjuster
IP67 (IEC)
3 (Industrial environment)
-25 to 60 degrees -13 to 140 degrees Fahrenheit (No dew condensation or icing allowed), Storage: -30 to 70 degrees -22 to 158 degrees Fahrenheit
35 to 85 % RH, Storage: 35 to 85 % RH
Incandescent light: 3,500 lx or less at the light-receiving face
EN 60947-5-2
1,000 V AC for one min. between all supply terminals connected together and enclosure
20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure
10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each
500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each
Infrared LED (peak emission wavelength: 880 nm 0.035mil, modulated)