Specifications

Specifications table for model R-5735/R-5630
ItemPerformance characteristics
Tg (DSC),195 °C
Tg (TMA), (°C)185 °C
Tg (DMA),210 °C
Td (Thermal Decomposition) (°C)360 °C
T288 (Without Cu) (min)>120 min
T288 (With Cu) (min)35 min
CTE-Y <Tg (ppm/℃)12-15 ppm/°C
CTE-Y, <Tg12-15 ppm/°C
CTE-Z <Tg (ppm/℃)31 ppm/°C
CTE α2 Z-axis: Test Method IPC-TM-650 2.4.24; Condition A (ppm/℃)240 ppm/°C
Thermal Conductivity, (W/m・K)
Volume Resistivity (MΩ・cm)1 x 10⁹ MΩ · cm
Surface Resistivity (mΩ)1 x 10⁸ MΩ
Dielectric Constant (Dk) @ 1Ghz; Test Method IPC-TM-650; Condition C-24/23/503.9
Dielectric Constant (Dk) @ 10Ghz; Test Method IPC-TM-650; Condition C-24/23/503.9
Dielectric Constant (Dk) @ 12Ghz; Test Method Balanced-type Circular Disk Resonator; Condition C-24/23/50
Df at 1 GHz0.005
Df at 10 GHz0.007
Df at 12 GHz
Water Absorption (%)0.14%
Poisson's Ratio
Flexural Warp (MD) (GPa)25 GPa
Flexural Fill (TD) (GPa)23 GPa
Peel Strength (1 Oz. Cu) (kN/m)1.2 (Cu:RT) kN/m
Flammability94V-0
Sample Thickness (mm)0.8 mm

Stock check

Model image for R-5735/R-5630

R-5735/R-5630