| | Single side stable | 48 V DC | 271 mW | 3 Form A 1 Form B | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 5.6 mA | 8,500 Î© | 156% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 12 V DC | 200 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 16.7 mA | 720 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 12 V DC | 200 mW | 2 Form A 2 Form B | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 16.7 mA | 720 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 48 V DC | 271 mW | 2 Form A 2 Form B | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 5.6 mA | 8,500 Î© | 156% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 3 V DC | 200 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 66.7 mA | 45 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 24 V DC | 202 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 8.4 mA | 2,850 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 6 V DC | 200 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 33.3 mA | 180 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | Single side stable | 6 V DC | 200 mW | 3 Form A 1 Form B | Sealed | PC board terminal | Sockets are available. | 50 | 500 | Max. 70% V of rated coil voltage (Initial) | Min. 10% V of rated coil voltage (Initial) | 33.3 mA | 180 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | Max. 15 ms at rated coil voltage (without bounce) | Max. 10 ms at rated coil voltage (without bounce, without diode) | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | | | | |

| | 2 coil latching | 5 V DC | 192 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | | | Set coil: 38.5 mA Reset coil: 38.5 mA | Set coil: 130 Î© Reset coil: 130 Î© | 180% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | | | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | Max. 70% V of rated coil voltage (Initial) | Max. 70% V of rated coil voltage (Initial) | Max. 15 ms at rated coil voltage (without bounce) | Max. 15 ms at rated coil voltage (without bounce, without diode) |

| | 2 coil latching | 48 V DC | 355 mW | 4 Form A | Sealed | PC board terminal | Sockets are available. | 50 | 500 | | | Set coil: 7.4 mA Reset coil: 7.4 mA | Set coil: 6,500 Î© Reset coil: 6,500 Î© | 135% V of rated coil voltage (at 40Â°C) | Twin | Max. 50 mÎ© (by voltage drop 6 V DC 1 A) | Double layer contact of AgNi-AgSnO_{2} type + Au clad | 4 A 250 V AC, 3 A 30 V DC | 1,000 VA, 90 W | 250 V AC, 48 V DC | 4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A) | 100 ÂµA 100 mV DC | Min. 10,000 MÎ© (at 500 V DC, Measured portion is the same as the case of dielectric strength.) | 750 Vrms for 1 min (detection current: 10 mA) | 1,000 Vrms for 1 min (detection current: 10 mA) | 1,500 Vrms for 1 min (detection current: 10 mA) | | | 490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 Âµs) | 980 m/s^{2} (half-sine shock pulse: 6 ms) | 10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 Âµs) | 10 to 55 Hz (at double amplitude of 4 mm) | Min. 100x10^{6} ope. (switching frequency: at 50 cps) | Ambient temperature: -55 to +65Â°C Humidity: 5 to 85% RH (Avoid icing and condensation) | Approx. 8 g | [switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC | Max. 70% V of rated coil voltage (Initial) | Max. 70% V of rated coil voltage (Initial) | Max. 15 ms at rated coil voltage (without bounce) | Max. 15 ms at rated coil voltage (without bounce, without diode) |