Single side stable

48 V DC

271 mW

3 Form A 1 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

5.6 mA

8,500 Ω

156% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

12 V DC

200 mW

4 Form A

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

16.7 mA

720 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

12 V DC

200 mW

2 Form A 2 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

16.7 mA

720 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

48 V DC

271 mW

2 Form A 2 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

5.6 mA

8,500 Ω

156% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

3 V DC

200 mW

4 Form A

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

66.7 mA

45 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

24 V DC

202 mW

4 Form A

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

8.4 mA

2,850 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

6 V DC

200 mW

4 Form A

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

33.3 mA

180 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Single side stable

6 V DC

200 mW

3 Form A 1 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Max. 70% V of rated coil voltage (Initial)

Min. 10% V of rated coil voltage (Initial)

33.3 mA

180 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

Max. 15 ms at rated coil voltage (without bounce)

Max. 10 ms at rated coil voltage (without bounce, without diode)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

2 coil latching

3 V DC

200 mW

2 Form A 2 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Set coil: 66.7 mA Reset coil: 66.7 mA

Set coil: 45 Ω Reset coil: 45 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Max. 70% V of rated coil voltage (Initial)

Max. 70% V of rated coil voltage (Initial)

Max. 15 ms at rated coil voltage (without bounce)

Max. 15 ms at rated coil voltage (without bounce, without diode)

2 coil latching

6 V DC

200 mW

2 Form A 2 Form B

Sealed

PC board terminal

Sockets are available.

50

500

Set coil: 33.3 mA Reset coil: 33.3 mA

Set coil: 180 Ω Reset coil: 180 Ω

180% V of rated coil voltage (at 40℃)

Twin

Max. 50 mΩ (by voltage drop 6 V DC 1 A)

Double layer contact of AgNi-AgSnO_{2} type + Au clad

4 A 250 V AC, 3 A 30 V DC

1,000 VA, 90 W

250 V AC, 48 V DC

4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)

100 μA 100 mV DC

Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)

750 Vrms for 1 min (detection current: 10 mA)

1,000 Vrms for 1 min (detection current: 10 mA)

1,500 Vrms for 1 min (detection current: 10 mA)

490 m/s^{2} (half-sine shock pulse: 11 ms, detection time: 10 μs)

980 m/s^{2} (half-sine shock pulse: 6 ms)

10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)

10 to 55 Hz (at double amplitude of 4 mm)

Min. 100x10^{6} ope. (switching frequency: at 50 cps)

Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)

Approx. 8 g

[switching frequency: 20 times/min] Min. 200x10^{3} ope. 3 A 30 V DC Min. 100x10^{3} ope. 4 A 250 V AC

Max. 70% V of rated coil voltage (Initial)

Max. 70% V of rated coil voltage (Initial)

Max. 15 ms at rated coil voltage (without bounce)

Max. 15 ms at rated coil voltage (without bounce, without diode)