S Series Relays

Panasonic’s S Series Polarized Power Relays use Panasonic's exclusive 4-gap balanced armature to realize high sensitivity, strong resistance to vibration and shock, and high reliability in a small package. These S Series Relays are available in 2 Form A 2 Form B, 3 Form A 1 Form B, or 4 Form A contact arrangements.

The S Series Relays can provide wide-ranging control from 100uA 100mVDC to 4A 250VAC using gold clad silver alloy contacts in a twin contact structure which minimizes mechanical bouncing of contacts and increases reliability. In addition, each is available in 1-coil latching, 2-coil latching, or single side stable types.

Features and Benefits

Compact With High Reliability
High Sensitivity And Low Thermal Electromotive Force
Excellent Shock And Vibration Resistance
Variety Of Contact Arrangements
Latching Types Available
Socket Options
Sealed Construction Option Allows Automatic Washing
RoHS / REACH Compliant
UL/C-UL, CSA, TUV Approved

Applications

Measuring Equipment
Telecommunications
Data Processing
Alarm Equipment

S Series Relays

Part number list

Results 36

Models table for series S Series Relays
Part No.	Operating Function	Rated Coil Voltage	Rated Operating Power	Contact Arrangement	Protective Construction	Terminal Type	Accessories	Packing Quantity; Inner Carton (Pcs.)	Packing Quantity; Outer Carton (Pcs.)	Operate Voltage (@20oC)	Release Voltage (at20°C)	Rated Operating Current [±10%] (at 20°C)	Resistance [±10%] (at 20°C)	Max. Allowable Voltage	Contact Shape	Contact Resistance (Initial)	Contact Material	Contact Rating (Resistive Load)	Max. Switching Power (Resistive Load)	Max. Switching Voltage	Max. Switching Current	Min. Switching Load (Reference Value)	Insulation Resistance (Initial)	Dielectric Strength (Initial): Between Open Contacts	Dielectric Strength (Initial): Between Contact Sets	Dielectric Strength (Initial): Between Contact and Coil	Operate Time (Initial) (At 20oC)	Release Time (Initial) (at 20°C)	Hock Resistance (Functional)	Hock Resistance (Destructive)	Vibration Resistance (Functional)	Vibration Resistance (Destructive)	Mechanical Life	Conditions	Weight (Typ.)	Resistive Load	Set Voltage	Reset Voltage	Time (Initial) (at 20°C 68°F) (Initial)	Reset Time (Initial) (at20°C 68°F)
S3EB-48V	Single side stable	48 V DC	271 mW	3 Form A 1 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	5.6 mA	8,500 Ω	156% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-12V	Single side stable	12 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	16.7 mA	720 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-12V	Single side stable	12 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	16.7 mA	720 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-48V	Single side stable	48 V DC	271 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	5.6 mA	8,500 Ω	156% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-3V	Single side stable	3 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	66.7 mA	45 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-24V	Single side stable	24 V DC	202 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	8.4 mA	2,850 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-6V	Single side stable	6 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	33.3 mA	180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S3EB-6V	Single side stable	6 V DC	200 mW	3 Form A 1 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	33.3 mA	180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-L2-3V	2 coil latching	3 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500			Set coil: 66.7 mA Reset coil: 66.7 mA	Set coil: 45 Ω Reset coil: 45 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)			490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC	Max. 70% V of rated coil voltage (Initial)	Max. 70% V of rated coil voltage (Initial)	Max. 15 ms at rated coil voltage (without bounce)	Max. 15 ms at rated coil voltage (without bounce, without diode)
S2EB-L2-6V	2 coil latching	6 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500			Set coil: 33.3 mA Reset coil: 33.3 mA	Set coil: 180 Ω Reset coil: 180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)			490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC	Max. 70% V of rated coil voltage (Initial)	Max. 70% V of rated coil voltage (Initial)	Max. 15 ms at rated coil voltage (without bounce)	Max. 15 ms at rated coil voltage (without bounce, without diode)

Models table for series S Series Relays
Part No.	Operating Function	Rated Coil Voltage	Rated Operating Power	Contact Arrangement	Protective Construction	Terminal Type	Accessories	Packing Quantity; Inner Carton (Pcs.)	Packing Quantity; Outer Carton (Pcs.)	Operate Voltage (@20oC)	Release Voltage (at20°C)	Rated Operating Current [±10%] (at 20°C)	Resistance [±10%] (at 20°C)	Max. Allowable Voltage	Contact Shape	Contact Resistance (Initial)	Contact Material	Contact Rating (Resistive Load)	Max. Switching Power (Resistive Load)	Max. Switching Voltage	Max. Switching Current	Min. Switching Load (Reference Value)	Insulation Resistance (Initial)	Dielectric Strength (Initial): Between Open Contacts	Dielectric Strength (Initial): Between Contact Sets	Dielectric Strength (Initial): Between Contact and Coil	Operate Time (Initial) (At 20oC)	Release Time (Initial) (at 20°C)	Hock Resistance (Functional)	Hock Resistance (Destructive)	Vibration Resistance (Functional)	Vibration Resistance (Destructive)	Mechanical Life	Conditions	Weight (Typ.)	Resistive Load	Set Voltage	Reset Voltage	Time (Initial) (at 20°C 68°F) (Initial)	Reset Time (Initial) (at20°C 68°F)
S3EB-48V	Single side stable	48 V DC	271 mW	3 Form A 1 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	5.6 mA	8,500 Ω	156% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-12V	Single side stable	12 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	16.7 mA	720 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-12V	Single side stable	12 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	16.7 mA	720 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-48V	Single side stable	48 V DC	271 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	5.6 mA	8,500 Ω	156% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-3V	Single side stable	3 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	66.7 mA	45 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-24V	Single side stable	24 V DC	202 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	8.4 mA	2,850 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S4EB-6V	Single side stable	6 V DC	200 mW	4 Form A	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	33.3 mA	180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S3EB-6V	Single side stable	6 V DC	200 mW	3 Form A 1 Form B	Sealed	PC board terminal	Sockets are available.	50	500	Max. 70% V of rated coil voltage (Initial)	Min. 10% V of rated coil voltage (Initial)	33.3 mA	180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)	Max. 15 ms at rated coil voltage (without bounce)	Max. 10 ms at rated coil voltage (without bounce, without diode)	490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC
S2EB-L2-3V	2 coil latching	3 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500			Set coil: 66.7 mA Reset coil: 66.7 mA	Set coil: 45 Ω Reset coil: 45 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)			490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC	Max. 70% V of rated coil voltage (Initial)	Max. 70% V of rated coil voltage (Initial)	Max. 15 ms at rated coil voltage (without bounce)	Max. 15 ms at rated coil voltage (without bounce, without diode)
S2EB-L2-6V	2 coil latching	6 V DC	200 mW	2 Form A 2 Form B	Sealed	PC board terminal	Sockets are available.	50	500			Set coil: 33.3 mA Reset coil: 33.3 mA	Set coil: 180 Ω Reset coil: 180 Ω	180% V of rated coil voltage (at 40℃)	Twin	Max. 50 mΩ (by voltage drop 6 V DC 1 A)	Double layer contact of AgNi-AgSnO₂ type + Au clad	4 A 250 V AC, 3 A 30 V DC	1,000 VA, 90 W	250 V AC, 48 V DC	4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)	100 μA 100 mV DC	Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)	750 Vrms for 1 min (detection current: 10 mA)	1,000 Vrms for 1 min (detection current: 10 mA)	1,500 Vrms for 1 min (detection current: 10 mA)			490 m/s² (half-sine shock pulse: 11 ms, detection time: 10 μs)	980 m/s² (half-sine shock pulse: 6 ms)	10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)	10 to 55 Hz (at double amplitude of 4 mm)	Min. 100x10⁶ ope. (switching frequency: at 50 cps)	Ambient temperature: -55 to +65℃ Humidity: 5 to 85% RH (Avoid icing and condensation)	Approx. 8 g	[switching frequency: 20 times/min] Min. 200x10³ ope. 3 A 30 V DC Min. 100x10³ ope. 4 A 250 V AC	Max. 70% V of rated coil voltage (Initial)	Max. 70% V of rated coil voltage (Initial)	Max. 15 ms at rated coil voltage (without bounce)	Max. 15 ms at rated coil voltage (without bounce, without diode)