Panasonic’s S Series Polarized Power Relays use Panasonic's exclusive 4-gap balanced armature to realize high sensitivity, strong resistance to vibration and shock, and high reliability in a small package. These S Series Relays are available in 2 Form A 2 Form B, 3 Form A 1 Form B, or 4 Form A contact arrangements.

The S Series Relays can provide wide-ranging control from 100uA 100mVDC to 4A 250VAC using gold clad silver alloy contacts in a twin contact structure which minimizes mechanical bouncing of contacts and increases reliability. In addition, each is available in 1-coil latching, 2-coil latching, or single side stable types.

Features and Benefits

  • Compact With High Reliability
  • High Sensitivity And Low Thermal Electromotive Force
  • Excellent Shock And Vibration Resistance
  • Variety Of Contact Arrangements
  • Latching Types Available
  • Socket Options
  • Sealed Construction Option Allows Automatic Washing
  • RoHS / REACH Compliant
  • UL/C-UL, CSA, TUV Approved

Applications

  • Measuring Equipment
  • Telecommunications
  • Data Processing
  • Alarm Equipment
Series image for S Series Relays

S Series Relays

Part number list

Results 36
Models table for series S Series Relays
Part No.DatasheetOperating Function Rated Coil VoltageRated Operating Power Contact ArrangementProtective ConstructionTerminal TypeAccessoriesPacking Quantity; Inner Carton (Pcs.) Packing Quantity; Outer Carton (Pcs.)Operate Voltage (@20oC)Release Voltage (at20°C) Rated Operating Current [±10%] (at 20°C)Resistance [±10%] (at 20°C) Max. Allowable Voltage Contact ShapeContact Resistance (Initial)Contact MaterialContact Rating (Resistive Load)Max. Switching Power (Resistive Load) Max. Switching VoltageMax. Switching CurrentMin. Switching Load (Reference Value) Insulation Resistance (Initial)Dielectric Strength (Initial): Between Open ContactsDielectric Strength (Initial): Between Contact SetsDielectric Strength (Initial): Between Contact and CoilOperate Time (Initial) (At 20oC)Release Time (Initial) (at 20°C) Hock Resistance (Functional)Hock Resistance (Destructive)Vibration Resistance (Functional) Vibration Resistance (Destructive)Mechanical LifeConditionsWeight (Typ.)Resistive LoadSet Voltage Reset VoltageTime (Initial) (at 20°C 68°F) (Initial) Reset Time (Initial) (at20°C 68°F)
Single side stable
48 V DC
271 mW
3 Form A 1 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
5.6 mA
8,500 Ω
156% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
12 V DC
200 mW
4 Form A
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
16.7 mA
720 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
12 V DC
200 mW
2 Form A 2 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
16.7 mA
720 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
48 V DC
271 mW
2 Form A 2 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
5.6 mA
8,500 Ω
156% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
3 V DC
200 mW
4 Form A
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
66.7 mA
45 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
24 V DC
202 mW
4 Form A
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
8.4 mA
2,850 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
6 V DC
200 mW
4 Form A
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
33.3 mA
180 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Single side stable
6 V DC
200 mW
3 Form A 1 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Max. 70% V of rated coil voltage (Initial)
Min. 10% V of rated coil voltage (Initial)
33.3 mA
180 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
Max. 15 ms at rated coil voltage (without bounce)
Max. 10 ms at rated coil voltage (without bounce, without diode)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
2 coil latching
3 V DC
200 mW
2 Form A 2 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Set coil: 66.7 mA
Reset coil: 66.7 mA
Set coil: 45 Ω
Reset coil: 45 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Max. 70% V of rated coil voltage (Initial)
Max. 70% V of rated coil voltage (Initial)
Max. 15 ms at rated coil voltage (without bounce)
Max. 15 ms at rated coil voltage (without bounce, without diode)
2 coil latching
6 V DC
200 mW
2 Form A 2 Form B
Sealed
PC board terminal
Sockets are available.
50
500
Set coil: 33.3 mA
Reset coil: 33.3 mA
Set coil: 180 Ω
Reset coil: 180 Ω
180% V of rated coil voltage (at 40℃)
Twin
Max. 50 mΩ (by voltage drop 6 V DC 1 A)
Double layer contact of AgNi-AgSnO2 type + Au clad
4 A 250 V AC, 3 A 30 V DC
1,000 VA, 90 W
250 V AC, 48 V DC
4 A (AC), 3 A (DC) (30 to 48 V DC at less than 0.5 A)
100 μA 100 mV DC
Min. 10,000 MΩ (at 500 V DC, Measured portion is the same as the case of dielectric strength.)
750 Vrms for 1 min (detection current: 10 mA)
1,000 Vrms for 1 min (detection current: 10 mA)
1,500 Vrms for 1 min (detection current: 10 mA)
490 m/s2 (half-sine shock pulse: 11 ms, detection time: 10 μs)
980 m/s2 (half-sine shock pulse: 6 ms)
10 to 55 Hz (at double amplitude of 3 mm, detection time: 10 μs)
10 to 55 Hz (at double amplitude of 4 mm)
Min. 100x106 ope. (switching frequency: at 50 cps)
Ambient temperature: -55 to +65℃
Humidity: 5 to 85% RH (Avoid icing and condensation)
Approx. 8 g
[switching frequency: 20 times/min]
Min. 200x103 ope. 3 A 30 V DC
Min. 100x103 ope. 4 A 250 V AC
Max. 70% V of rated coil voltage (Initial)
Max. 70% V of rated coil voltage (Initial)
Max. 15 ms at rated coil voltage (without bounce)
Max. 15 ms at rated coil voltage (without bounce, without diode)
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