Photoelectric Sensors / Laser Sensors: Amplifier built-in Ultra-slim Photoelectric Sensor EX-10S

Model List

Found 20 matches. Display 1 - 15 matches.
Part No.sort ascendingData SheetSensing rangeMin. sensing objectRepeatability(perpendicular to sensing axis)Supply voltageCurrent consumptionOutputOutput:Utilization categoryOutput:Short-circuit protectionResponse timeParts Inventory
   Column active Filter
Close

Filter by Sensing range

Column active Filter
Close

Filter by Min. sensing object

Column active Filter
Close

Filter by Repeatability(perpendicular to sensing axis)

Column active Filter
Close

Filter by Supply voltage

Column active Filter
Close

Filter by Current consumption

Column active Filter
Close

Filter by Output

Column active Filter
Close

Filter by Output:Utilization category

Column active Filter
Close

Filter by Output:Short-circuit protection

Column active Filter
Close

Filter by Response time

 
design engineersPanasonicEX-19SB-PN
1 m 3.281 ftdia. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-19SB
1 m 3.281 ftdia. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-19SA-PN
1 m 3.281 ftdia. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-19SA
1 m 3.281 ftdia. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SEB-PN
500 mm 19.685 india. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SEB
500 mm 19.685 india. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SEA-PN
500 mm 19.685 india. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SEA
500 mm 19.685 india. 2.0 mm dia. 0.078 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SB-PN
500 mm 19.685 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SB
500 mm 19.685 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SA-PN
500 mm 19.685 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-13SA
500 mm 19.685 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-11SEB-PN
150 mm 5.906 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-11SEB
150 mm 5.906 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
NPN open-collector transistor
- Maximum sink current: 50 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 2 V or less (at 50 mA sink current),1 V or less (at 16 mA sink current)
DC-12 or DC-13Incorporated0.5 ms or less
design engineersPanasonicEX-11SEA-PN
150 mm 5.906 india. 1.0 mm dia. 0.039 in opaque object0.05 mm 0.002 in or less12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or lessEmitter: 10 mA or less
Receiver: 10 mA or less
PNP open-collector transistor
- Maximum source current: 50 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
DC-12 or DC-13Incorporated0.5 ms or less

Pages