R-5775(K)/R-5670(K)

Specification

Specifications table for model R-5775(K)/R-5670(K)
ItemPerformance characteristics
Tg (DSC),185 °C
Tg (DMA),210 °C
Td (Thermal Decomposition) (°C)410 °C
T288 (Without Cu) (min)>120 min
T288 (With Cu) (min)>120 min
CTE-Y, 14-16 ppm/°C
CTE-Y 14-16 ppm/°C
CTE-Z 45 ppm/°C
CTE α2 Z-axis: Test Method IPC-TM-650 2.4.24; Condition A (ppm/℃)260 ppm/°C
Thermal Conductivity, (W/m・K)0.42 W/m · K
Volume Resistivity (MΩ・cm)1 x 10⁹ MΩ · cm
Surface Resistivity (mΩ)1 x 10⁸ MΩ
Dielectric Constant (Dk) @ 1Ghz; Test Method IPC-TM-650; Condition C-24/23/503.4
Dielectric Constant (Dk) @ 10Ghz; Test Method IPC-TM-650; Condition C-24/23/50
Dielectric Constant (Dk) @ 12Ghz; Test Method Balanced-type Circular Disk Resonator; Condition C-24/23/503.4
Df at 1 GHz0.002
Df at 10 GHz
Df at 12 GHz0.004
Water Absorption (%)0.14%
Poisson's Ratio 0.2
Flexural Warp (MD) (GPa)19 GPa
Flexural Fill (TD) (GPa)18 GPa
Peel Strength (1 Oz. Cu) (kN/m)0.8 (Cu:H-VLP) kN/m
Flammability94V-0
Sample Thickness (mm)0.75 mm

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