PhotoMOS Power 1 Form A
PhotoMOS Power 1 Form A Relays with types available for DC or AC/DC dual use, come in slim SIL 4-pin packages. High current capacity up to 4A is available. Extremely low on-resistance, used to control low-level signals, with low off state leakage current 10uA max and high isolation voltage of 2500V. Eliminates the need for a counter electromotive protective diode in the drive circuit, on the input side. These Relays eliminate the need for a power supply to drive the power MOSFET. No restriction on mounting direction. Low thermoelectromotive force. Neither noise nor arc at contact.
Features of the PhotoMOS Power 1 Form A Relay
- Slim SIL4-pin Package
- Extremely Low On-Resistance
- Control Low-Level Signal
- Low-Level Off State Leakage Current Of Max. 10 uA
PhotoMOS Power 1 Form A
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