PhotoMOS®

Small Package Size. Fast-Switching Speed and Low Capacitance.

PhotoMOS are MOSFET enabled solid state relays featuring low off-state leakage current and stable on-resistance over the component lifetime. Low CxR values, high optical isolation between input and output, and DC and AC / DC load ratings. MOSFET drivers available in SSOP, SOP 4-pin, and DIP 6-pin. 

Features:

  • High switching speed
  • Long operational life
  • High vibration
  • Shock resistance
  • No arcing
  • No bounce
  • No switching noise

Applications:

  • Test and Measurement
  • Instrumentation
  • Security
  • Medical
  • Data Communications
  • Automotive
  • Railway and Traffic Signals
  • Industrial Machines

Series List

Results 70
Series table for lineup PhotoMOS®
Series/TypeDatasheetSeriesTypePackageOutput configurationLoad voltage [ VL ]I/O isolation voltageFeatures
CC TSON CxR
CC
TSON
1 Form A
30V,
40V,
60V,
100V
200V rms
GE 1 Form A (DIP4-pin type)
GE
DIP4
1 Form A
30V,
60V,
350V,
400V,
600V
5,000V rms
General use and Economical
GE 1 Form A (DIP6-pin type)
GE
DIP6
1 Form A
350V,
400V
1,500V rms,
5,000V rms
General use and Economical
GE 1 Form A & 1 Form B
GE
DIP8
1 Form A & 1 Form B
60V,
350V,
400V
5,000V rms
General use and Economical
GE 1 Form B (DIP4-pin type)
GE
DIP4
1 Form B
60V,
350V,
400V
5,000V rms
General use and Economical
GE 1 Form B (DIP6-pin type)
GE
DIP6
1 Form B
60V,
350V,
400V
1,500V rms,
5,000V rms
General use and Economical
GE 2 Form A
GE
DIP8
2 Form A
60V,
350V,
400V,
600V
5,000V rms
General use and Economical
GE 2 Form B
GE
DIP8
2 Form B
400V
5,000V rms
General use and Economical
GU 1 Form A Current Limiting
GU
DIP4
1 Form A
350V
5,000V rms
Current limiting
GU 1 Form A High Capacity
GU
DIP4
1 Form A
60V
5,000V rms
High capacity

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