Panasonic's PhotoMOS GE 1 Form A Relay comes equipped with reinforced insulation of 5,000Vrms in a DIP6-Pin type package. This PhotoMOS Relay also features low-level analog signal control, a stable on-resistance, and a low-level off-state leakage current of max 1uA.
Features and Benefits of PhotoMOS GE 1 Form A Relay
Reinforced Insulation Of I/O Isolation Voltage 5,000 V
Controls Low-Level Analog Signals
Stable On-Resistance
Low-Level Off-State Leakage Current Of Max. 1 μA
PhotoMOS GE 1 Form A Relay - Applications
High-Speed Inspection Machines
Telephone Equipment
Data Communication Equipment
Computers
PhotoMOS GE 1 Form A (DIP6-pin type)
Part number list
Results 16
Models table for series PhotoMOS GE 1 Form A (DIP6-pin type)