PhotoMOS HE 1 Form A & 1 Form B
Pansonic’s PhotoMOS® HE Type is applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A or two independent 1 Form B relays. This dual contact arrangement is incorporated in a compact DIP8-Pin for space savings and downsizing. Featuring low on-resistance and off state leakage currents this device is also suitable for low-level analog signal control. Rated at 400V and load currents up to 120mA this device can be found in various applications. Some applications for this PhotoMOS® include high-speed inspection machines, data communication equipment, sensing equipment, and more.
Features Of The PhotoMOS HE 1 Form A and 1 Form B
- Applicable for 1 Form A and 1 Form B Use
- Applicable for Two Independent 1 Form A or 1 Form B
- Controls Low-Level Analog Signals
- High Sensitivity and Low-On Resistance
- Low-Level Off State Leakage Current of Max 1uA
Applications
- High-Speed Inspection Machines
- Data Communication Equipment
- Telephone Equipment
- Sensing Equipment
PhotoMOS HE 1 Form A & 1 Form B
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