PhotoMOS GE 1 Form B (DIP4-pin type)
Panasonic's normally closed GE 1 Form B PhotoMOS Relay comes equipped with reinforced insulation of 5,000Vrms in a DIP4-Pin package. This has high sensitivity and low on-resistance controlling a max of 0.55A load current with 5mA input current. Additionally, this Relay is suitable for controlling low-level analog signals and has a low-level off-state leakage current.
Features and Benefits of PhotoMOS GE 1 Form B Relay
- 1 Form B Output Type
- Reinforced Insulation Of 5,000 V
- Controls Low-Level Analog Signals
- Low On-Resistance
- Low-Level Off-State Leakage Current
PhotoMOS GE 1 Form B Relay - Applications
- Power Supply
- Measuring Equipment
- Security Equipment
- Modem
- Telephone Equipment
- Electricity, Plant Equipment
- Sensing Equipment
PhotoMOS GE 1 Form B (DIP4-pin type)
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