Specifications table for model R-F775
ItemPerformance characteristics
Tg (DSC) (°C)-
Tg (TMA), (°C)-
Tg (DMA) (°C)>340 (TPI 240)
Td (Thermal Decomposition) (°C)577
T288 (Without Cu) (min)-
T288 (With Cu) (min)-
CTE-X, <Tg (ppm/℃)18-20
CTE-Y <Tg (ppm/℃)16-19
CTE-Z <Tg (ppm/℃)-
CTE α2 Z-axis: Test Method IPC-TM-650 2.4.24; Condition A (ppm/℃)-
Thermal Conductivity, (W/m・K)0.16
Volume Resistivity (MΩ・cm)-
Surface Resistivity (mΩ)-
Dk at 1 GHz3.2
Dk at 10 GHz3.2 Test method:Cavity resonance
Dielectric Constant (Dk) @ 12Ghz; Test Method Balanced-type Circular Disk Resonator; Condition C-24/23/503.1(19GHz)
Df at 1 GHz0.002
Df at 10 GHz0.004 Test method:Cavity resonance
Df at 12 GHz0.003(19GHz)
Water Absorption (%)0.9 Test method:Internal method
Flexural Warp (MD) (GPa)-
Flexural Fill (TD) (GPa)-
Peel Strength (1 Oz. Cu) (kN/m)1.3(ED:18μm)
Sample Thickness (mm)0.025mm

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