Panasonic's PhotoMOS GE 1 Form A Relay comes equipped with reinforced insulation of 5,000Vrms in a DIP4-Pin type package. This PhotoMOS Relay is suitable for controlling low-level analog signals while maintaining a low on-resistance and low-level off-state leakage current of max 1uA. Along with its small footprint size, especially when compared to mechanical relays, this device contributes to the reduction of PCB board space.
PhotoMOS® GU SOP 1 Form A High-Capacity Semiconductor Relays