PhotoMOS GE 1 Form A (DIP4-pin type)
Panasonic's PhotoMOS GE 1 Form A Relay comes equipped with reinforced insulation of 5,000Vrms in a DIP4-Pin type package. This PhotoMOS Relay is suitable for controlling low-level analog signals while maintaining a low on-resistance and low-level off-state leakage current of max 1uA. Along with its small footprint size, especially when compared to mechanical relays, this device contributes to the reduction of PCB board space.
Features and Benefits of PhotoMOS GE 1 Form A Relay
- Reinforced Insulation Of 5,000 V
- Controls Low-Level Analog Signals
- High Sensitivity And Low On-Resistance
- Low-Level Off-State Leakage Current Of Max. 1 μA
PhotoMOS GE 1 Form A Relay - Applications
- Modem
- Telephone Equipment
- Electricity, Plant Equipment
- Security Equipment
- Sensing Equipment
PhotoMOS GE 1 Form A (DIP4-pin type)
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