Panasonic's normally closed GE 1 Form B PhotoMOS Relay comes equipped with reinforced insulation of 5,000Vrms in a DIP4-Pin package. This has high sensitivity and low on-resistance controlling a max of 0.55A load current with 5mA input current. Additionally, this Relay is suitable for controlling low-level analog signals and has a low-level off-state leakage current.
PhotoMOS® GU SOP 1 Form A High-Capacity Semiconductor Relays